The LEE Flash G1 from Floadia is designed as a cost-effective SONOS technology solution. This nonvolatile memory offers remarkable cost efficiency, employing a low-cost process that requires minimal additional masks, thus reducing fabrication complexity. The design ensures compatibility with existing semiconductor processes, making it economical without sacrificing quality or performance.
This flash memory is built on a robust SONOS architecture, which stands out for its high reliability, a crucial factor in memory retention and endurance. The electric charge retention mechanism in SONOS is distinct from the traditional floating gate charge storage, offering superior reliability due to its resistance to leakage through defects. By utilizing Fowler Nordheim (FN) tunneling, the G1 guarantees minimal oxide damage and sustains a high level of performance even after many cycles.
Additionally, the G1's design focuses on simplifying manufacturing processes by using common materials, allowing for seamless integration into existing foundry workflows. This ease of implementation, combined with its robustness and low power requirements, makes the LEE Flash G1 a key product in high-demand, cost-sensitive applications.
