Floadia's LEE Flash G2 transcends standard flash memory by blending the qualities of logic and memory. This provides a dual benefit of non-volatile performance with logic-level operation, achieved through its unique tri-gate transistor architecture. The G2 cell combines a SONOS transistor with switching transistors, offering high-speed, non-volatile SRAM capabilities.
The G2 memory's design addresses one of the major challenges in memory technology: reducing power consumption. By employing a programming current that is substantially lower than conventional floating gate NVMs, it considerably lowers power demands. This technology allows for the memory and logic circuits to be connected directly, enabling more efficient chip architectures.
Additionally, the LEE Flash G2 supports a novel application where it can function as Non-Volatile SRAM (NV-SRAM). This combination eliminates the need for dedicated flash blocks, thereby streamlining the microcontroller architecture and enabling rapid wake-up or sleep modes. Such a configuration enhances the overall efficiency of systems, especially in complex SOC and FPGA designs.
