Magnetoresistive Random-Access Memory (MRAM) is an innovative type of memory technology that utilizes magnetic states to store information, in contrast to traditional electronic states used by other types of memory. This makes MRAM extremely resistant to radiation, which can be beneficial in industries dealing with high exposure to such environments.
A defining feature of MRAM is its non-volatility; it retains data without the need for a continuous power supply. This feature, combined with high-speed read and write capabilities, positions MRAM as a suitable candidate for applications that require retention of data without power and quick data access. MRAM also boasts a lower power consumption compared to other memory types, such as DRAM and SRAM, contributing to energy-efficient designs.
MRAM's resilience and efficiency make it ideal for use in aerospace, automotive, and military applications, where reliability and longevity are critical. It is progressively finding applications in consumer electronics as well, thanks to its scalability and compatibility with existing manufacturing processes.
