All IPs > Memory Controller & PHY > SRAM Controller
In the expansive world of semiconductor technology, SRAM Controller semiconductor IPs play a crucial role in managing static random access memory (SRAM). SRAM Controllers are critical components in a wide array of electronic systems due to their speed and efficiency in data access and storage operations. Whether in consumer electronics, telecommunications, or industrial applications, these controllers ensure that memory operations are optimized for maximum performance. At Silicon Hub, we offer an expansive selection of SRAM Controller IPs tailored to handle diverse computational needs.
SRAM Controllers are pivotal in connecting processors and SRAM memory blocks. They facilitate seamless communication between these components, ensuring that data is transferred quickly and efficiently. This capability is particularly crucial in applications that require real-time data processing and high-speed performance, such as gaming consoles, networking equipment, and advanced automotive systems. By integrating SRAM Controller IPs, designers can achieve reduced latency and enhanced system throughput, which are essential for maintaining competitiveness in today’s tech-driven market.
Apart from the impressive performance features, these semiconductor IP solutions are also designed with flexibility and scalability in mind. Users can select IPs that offer customizable features to cater to specific application requirements, such as varying memory sizes and bandwidths. This adaptability makes SRAM Controller IPs suitable for cutting-edge applications, including artificial intelligence (AI) devices, IoT technologies, and mobile computing. Furthermore, these controllers often come equipped with error correction capabilities, adding another layer of reliability to critical systems.
At Silicon Hub, our SRAM Controller semiconductor IP portfolio is carefully curated to meet the highest industry standards. Whether you are designing compact systems for power-sensitive environments or high-end servers requiring massive bandwidth, our selection offers robust and versatile solutions. Explore our SRAM Controller IPs to find the perfect match for your project requirements and ensure your next innovation harnesses the full potential of efficient and effective memory management.
CrossBar's ReRAM Memory brings a revolutionary shift in the non-volatile memory sector, designed with a straightforward yet efficient three-layer structure. Comprising a top electrode, a switching medium, and a bottom electrode, ReRAM holds vast potential as a multiple-time programmable memory solution. Leveraging the resistive switching mechanism, the technology excels in meter-scale data storage applications, integrating seamlessly into AI-driven, IoT, and secure computing realities. The patented ReRAM technology is distinguished by its ability to perform at peak efficiency with notable read and write speeds, making it a suitable candidate for future-facing chip architectures that require swift, wide-ranging memory capabilities. Unprecedented in its energy-saving capabilities, CrossBar's ReRAM slashes energy consumption by up to 5 times compared to eFlash and offers substantial improvements over NAND and SPI Flash memories. Coupled with exceptional read latencies of around 20 nanoseconds and write times of approximately 12 microseconds, the memory technology outperforms existing solutions, enhancing system responsiveness and user experiences. Its high-density memory configurations provide terabyte-scale storage with minimal physical footprint, ensuring effective integration into cutting-edge devices and systems. Moreover, ReRAM's design permits its use within traditional CMOS manufacturing processes, enabling scalable, stackable arrays. This adaptability ensures that suppliers can integrate these memory solutions at various stages of semiconductor production, from standalone memory chips to embedded roles within complex system-on-chip designs. The inherent simplicity, combined with remarkable performance characteristics, positions ReRAM Memory as a key player in the advancement of secure, high-density computing.
Revolutionizing SoC power delivery, the Aeonic Power family integrates state-of-the-art on-die voltage regulation capabilities. Its design supports energy and BOM optimization through a highly configurable framework that addresses a range of power delivery needs. Notably, Aeonic Power offers unprecedented telemetry oriented around Power Delivery Networks (PDN). This functionality is critical for gaining insights into SoC power behavior, providing capabilities for real-time monitoring and performance enhancement. This integration serves to reduce energy consumption through dynamic voltage and frequency scaling (DVFS) and virtual power islands. Flexible in application, Aeonic Power is ideal for handling the power complexities of chiplets and die-to-die interfaces. Its robustness and programmability aspire to suppress noise and harmonize power distribution across various SoC environments, facilitating reliable power management.
Toggle MRAM technology from Everspin facilitates reliable non-volatile memory solutions ideal for high-performance, demanding environments. Known for its durability and speed, Toggle MRAM provides solutions that bridge the gap between volatile and solid-state storage. This technology is particularly useful for applications requiring fast data retention and retrieval, ensuring integrity even in power failure scenarios. Due to its robust framework, Toggle MRAM has proven indispensable in industries such as aerospace, where the reliability of data storage can be crucial. The non-volatility offers the capability to store data even when powered off, a feature much appreciated in dedicated electronic systems and embedded applications. Furthermore, Toggle MRAM supports a myriad of interfaces, catering to broad industrial and commercial needs. Its architecture ensures it remains versatile and adaptable to continuous technological advancements, making it a future-proof solution for various applications. This blend of performance, reliability, and adaptability makes Toggle MRAM a cornerstone technology in Everspin's suite.
The AXI4 DMA Controller is a highly versatile IP core that supports multi-channel data transfers, ranging from 1 to 16 channels, depending on system requirements. Optimized for high throughput, this controller excels in transferring both small and large data sets effectively. It features independent DMA Read and Write Controllers for enhanced data handling with options for FIFO transfers to a diverse array of memory and peripheral configurations. This IP core offers significant flexibility with its programmable burst sizes, supporting up to 256 beats and adhering to critical boundary crossings in the AXI specification.
TwinBit Gen-1 is NSCore's pioneering solution in embedded non-volatile memory technology, optimized for seamless integration into CMOS logic processes across nodes ranging from 180nm to 55nm. Known for its robust endurance performance, it supports over 10,000 program/erase cycles, making it highly reliable for repeated usage. This IP is designed without necessitating any additional masks or process steps, which aligns with NSCore’s ethos of simplifying the integration process. TwinBit Gen-1's flexible memory configuration, spanning 64 bits up to 512K bits, ensures its applicability in a wide array of domains. From enabling secure key storage to supporting analog trimming and system switches on ASICs/ASSPs, it offers a broad spectrum of functional capabilities, making it ideally suited for modern IoT devices and embedded systems. With built-in test circuits that facilitate stress-free test environments and automotive-grade reliability, TwinBit Gen-1 presents a formidable option for applications that demand low-voltage and low-power operations. Its alignment with standard IPs and lack of additional process overhead also contribute to its attractive development turnaround time and cost-effectiveness.
EverOn is an ultra-low voltage SRAM developed by sureCore to cater to modern applications requiring extensive dynamic and static power savings. Built on the 40ULP BULK CMOS process, EverOn achieves up to 80% reductions in dynamic power utilization while cutting static power draw by 75%, making it highly efficient for IoT and wearable technology. Operational from 0.6V to 1.21V, EverOn supports a cycle time as short as 20MHz at its lowest voltage, scaling impressively to over 300MHz at its highest. This voltage scaling unlocks robust performance capabilities in energy-constrained environments, aligning with the trend towards increasingly sophisticated, low-power always-on devices. EverOn incorporates advanced techniques such as subdividing memory into banks for flexible power management and synchronized single-port operation, which enhances versatility. Its high-density bit cells facilitate reduced area footprints while the patented SMART-Assist technology ensures robust operation even at the retention voltage, supporting extended battery life applications in emerging markets.
YouDDR is a comprehensive technology encompassing not only the DDR controller, PHY, and I/O but also features specially developed tuning and testing software. It provides a complete subsystem solution to address the complex needs of DDR memory interfaces. The integrated approach allows for cohesive synchronization between the controller and PHY, optimizing performance and reliability. The YouDDR technology ensures seamless integration into a variety of platforms, supporting a broad range of applications from simple consumer electronics to advanced computing systems. By offering enhanced tuning capabilities, it allows developers to fine-tune performance metrics, ensuring that systems can operate within their optimal performance windows. Developers utilizing YouDDR benefit from a thoroughly tested and verified subsystem that significantly simplifies the design cycle. This not only reduces development time but also enhances the likelihood of first-pass success, providing a competitive edge in manufacturing efficiency and product launch speed.
CrossBar's ReRAM IP Cores present a sophisticated solution for enhancing embedded NVM within Microcontroller Units (MCUs) and System-on-Chip (SoC) architectures. Designed to work with advanced semiconductors and ASIC (Application-Specific Integrated Circuit) designs, these cores offer efficient integration, performance enhancement, and reduced energy consumption. The technology seeks to equip contemporary and next-generation chip designs with high-speed, non-volatile memory, enabling faster computation and data handling. Targeting the unique needs of IoT, mobile computing, and consumer electronics, the ReRAM IP Cores deliver scalable memory solutions that exceed traditional flash memory limits. These cores are built to be stackable and compatible with existing process nodes, highlighting their versatility. Furthermore, the integration of ReRAM technology ensures improved energy efficiency, with the added benefit of low latency data access—a critical factor for real-time applications and processing. These IP cores provide a seamless route to incorporating high-performance ReRAM into chips without major redesigns or adjustments. As the demand for seamless, secure data processing grows, this technology enables manufacturers and designers to aptly meet the challenges presented by ever-evolving digital landscapes. By minimizing energy usage while maximizing performance capabilities, these IP cores hold potential for transformative applications in high-speed, secure data processing environments.
The Zhenyue 510 SSD Controller represents a pivotal advancement in solid-state drive technology, tailored to meet the rigorous demands of enterprise-grade storage solutions. It leverages state-of-the-art technology to deliver exceptional data throughput and reliability, ensuring swift data access and enhanced storage efficiency. This controller is engineered to minimize latency, making it highly suitable for environments where data speed and reliability are crucial, such as cloud computing and enterprise data centers. With the ability to handle large volumes of data effortlessly, the Zhenyue 510 SSD Controller sets new benchmarks for performance and energy efficiency in storage solutions.
Secure OTP by PUFsecurity offers a tamperproof data storage solution designed for the next generation of secure memory needs. It is an enhanced anti-fuse OTP memory that provides secure storage for key data across various forms, ensuring that data in transit, use, or rest remains protected. This technology integrates physical macros, a digital RTL controller, and a resilient anti-tamper shell to guard against hardware attacks. As IoT devices become increasingly susceptible to early-stage attacks, Secure OTP presents a reliable means to safely store sensitive data such as keys and boot code. By transitioning to this tamperproof storage format, devices can effectively mitigate vulnerabilities inherent in legacy storage systems, fortifying data security at the hardware level.
The NVMe Streamer from MLE empowers next-generation storage solutions with its cutting-edge data streaming capabilities. NVMe technology, known for robust performance, is utilized here to achieve accelerated data processing and storage for critical applications. The NVMe Streamer provides high-speed connectivity, facilitating seamless data capture and record-keeping in high-bandwidth environments, such as cloud computing and data centers. With support for PCIe 3.0/4.0/5.0 standards, this IP core ensures compatibility with present and future hardware, fostering consistent and reliable performance across deployments. It acts as a pivotal component for computational storage and data movement, backing up extensive data processing with minimal latency and maximum throughput, essential for real-time operations and intensive data tasks. Design flexibility inherent in the NVMe Streamer allows it to be tailored to specific infrastructure needs, offering scalable solutions that can grow with technological advancements. This adaptability is key for organizations seeking to future-proof their storage capabilities in a fast-evolving digital landscape.
Floadia's LEE Flash G2 transcends standard flash memory by blending the qualities of logic and memory. This provides a dual benefit of non-volatile performance with logic-level operation, achieved through its unique tri-gate transistor architecture. The G2 cell combines a SONOS transistor with switching transistors, offering high-speed, non-volatile SRAM capabilities. The G2 memory's design addresses one of the major challenges in memory technology: reducing power consumption. By employing a programming current that is substantially lower than conventional floating gate NVMs, it considerably lowers power demands. This technology allows for the memory and logic circuits to be connected directly, enabling more efficient chip architectures. Additionally, the LEE Flash G2 supports a novel application where it can function as Non-Volatile SRAM (NV-SRAM). This combination eliminates the need for dedicated flash blocks, thereby streamlining the microcontroller architecture and enabling rapid wake-up or sleep modes. Such a configuration enhances the overall efficiency of systems, especially in complex SOC and FPGA designs.
Analog Bits' sensor solutions are designed to ensure high precision in monitoring and adjusting system parameters. These include temperature sensors, voltage monitors, and power integrity sensors which are critical for maintaining optimal operational conditions within semiconductor devices. With a focus on high accuracy and reliability, these sensors are integrated seamlessly into larger mixed-signal environments. They serve various applications from ensuring power supply stability to monitoring thermal conditions, which in turn, safeguard against potential overheating and electrical failures. These sensor IPs are particularly valuable in next-generation process nodes such as TSMC's N5 and below, providing intelligent systems with the insights necessary for adapting to changing conditions. By enhancing system durability and performance, these sensors play a central role in advancing energy-efficient technologies in industries ranging from automotive to consumer electronics.
PermSRAM is a highly adaptive nonvolatile memory macro designed to operate on standard CMOS fabrication processes. It supports a variety of process nodes ranging from 180nm to 28nm and beyond. One of its key features is its ability to offer diverse functionalities such as one-time programmable ROM and pseudo multi-time PROM, along with a multipage configuration that greatly broadens its utility across different applications. A prominent attribute of PermSRAM is its security-oriented design. It incorporates a non-rewritable hardware safety lock for secure code storage, which ensures data integrity and tamper resistance. This product caters to a wide span of memory sizes, from 64 bits to a robust 512K bits, accommodating both minimal and extensive data storage requirements. PermSRAM's inherently stable yield and reliability are complemented by its automotive-grade data retention, making it ideal for demanding applications that require long-term data retention capability at high temperatures. Furthermore, it operates efficiently without the need for a charge pump in read operations, offering significant efficiency and area savings.
TwinBit Gen-2 represents the next evolution in NSCore's non-volatile memory offering, supporting process nodes from 40nm to 22nm and beyond. Maintaining the foundational benefits of its predecessor, TwinBit Gen-2 further elevates its efficiency with the inclusion of the Pch Schottky Non-Volatile Memory Cell, which facilitates ultra-low-power operations without additional masks or process steps. The Gen-2 variant is engineered with an increased focus on minimizing power consumption while ensuring strong functional performance. It is adept at handling a wide range of program/erase dynamics through controlled hot carrier injection, offering refined operational flexibility for diverse applications. This memory technology serves applications requiring robust data management in tightly constrained power scenarios. Like its predecessor, TwinBit Gen-2 excels in environments demanding longevity and durability, boasting comprehensive integration flexibility into existing systems. Its ability to harmonize cutting-edge non-volatile memory design with the demands of smaller process nodes makes it highly beneficial for forward-looking applications.
The LEE Flash G1 from Floadia is designed as a cost-effective SONOS technology solution. This nonvolatile memory offers remarkable cost efficiency, employing a low-cost process that requires minimal additional masks, thus reducing fabrication complexity. The design ensures compatibility with existing semiconductor processes, making it economical without sacrificing quality or performance. This flash memory is built on a robust SONOS architecture, which stands out for its high reliability, a crucial factor in memory retention and endurance. The electric charge retention mechanism in SONOS is distinct from the traditional floating gate charge storage, offering superior reliability due to its resistance to leakage through defects. By utilizing Fowler Nordheim (FN) tunneling, the G1 guarantees minimal oxide damage and sustains a high level of performance even after many cycles. Additionally, the G1's design focuses on simplifying manufacturing processes by using common materials, allowing for seamless integration into existing foundry workflows. This ease of implementation, combined with its robustness and low power requirements, makes the LEE Flash G1 a key product in high-demand, cost-sensitive applications.
Offering a zero additional mask solution, LEE Flash ZT stands for a zero-technology-cost addition to Floadia’s flash memory repertoire. It is particularly valued for its minimal impact on manufacturing processes while maintaining robust performance attributes inherent to Floadia's memory products. This memory eliminates additional mask requirements in the production process, which not only reduces costs but also simplifies the manufacturing workflow. The ZT model effectively retains the essential features of robustness and high reliability, necessary for modern semiconductor applications, through its efficient architecture. In terms of functionality, the ZT adheres to high standards of charge retention and endurance, similar to other products in Floadia's lineup. With this design choice, Floadia ensures that the technology maintains the integrity and reliability expected from advanced embedded memory solutions, making it suitable for a wide array of industrial applications.
Tower Semiconductor's non-volatile memory solutions leverage cutting-edge design to enhance data retention and simplify integration within various devices. The solutions include advanced Y-Flash and e-Fuse technologies, offering reliable data storage options that retain information without a constant power supply. This makes them ideal for applications requiring persistent data, ranging from consumer electronics to critical industrial controls. The NVM solutions are designed to offer high endurance and retention periods, granting devices the capability to operate effectively across diverse environmental conditions. Y-Flash supports fast write and erase times, while e-Fuse enables secure, permanent programming options, prototyping a versatile memory solution suitable for field programming and personalization. In addition to their technological sophistication, these solutions are supported by a comprehensive suite of design resources including detailed libraries and validation data. This ensures seamless integration with existing architectures, allowing designers to rapidly bring enhancements to market. As such, Tower Semiconductor's NVM offerings signify a blend of reliability, adaptability, and innovation in modern data storage technology.
CodaCache Last-Level Cache is an advanced, shared cache solution specifically designed to minimize memory latency and boost SoC performance. Its configurable nature allows it to be tailored to specific design needs, optimizing data flow and enhancing power efficiency across the chip. This cache helps overcome common SoC challenges related to timing closure, performance, and layout congestion by providing a flexible caching architecture that ensures effective data management and reliable operations. Its role in optimizing memory hierarchy enhances computational speeds and system reliability. CodaCache is particularly beneficial for applications that require rapid access to large data sets, ensuring that power consumption is minimized while maintaining high performance standards. Its versatility and efficiency make it a top choice for industries striving for high data throughput and low latency operations.
LEE Fuse ZA from Floadia offers a unique approach with its zero additional mask anti-fuse memory technology. Designed for one-time programmable (OTP) applications, this memory type is cost-efficient and easily adaptable to existing manufacturing processes without requiring additional masks. The ZA fuse is characterized by its reliable anti-fuse mechanism, providing secure data retention. It excels in applications requiring a permanent programming solution and offers high endurance due to its robust design. By eliminating the need for complex mask layers, the LEE Fuse ZA significantly cuts down production costs while maintaining superior performance. Its compatibility with standard CMOS processes further underscores its suitability for various implementations where cost efficiency and reliability are paramount. The design guarantees effective fuse operation, making the LEE Fuse ZA a popular choice for applications in diverse sectors needing a robust OTP solution.
SuperFlash® technology is distinguished by its proprietary split-gate Flash memory architecture, designed to deliver high performance with simplified integration into System-on-Chip (SoC) solutions. This technology ensures reliability and efficiency across various industrial applications. It offers compatibility with standard silicon CMOS and has been proven to possess high endurance and excellent data retention capabilities. Given its ability to withstand extreme temperatures while maintaining performance, SuperFlash® is ideal for applications in the automotive sector requiring stringent reliability standards.\n\nThis technology spans multiple process nodes, from 500nm down to 28nm, solidifying its flexibility and adaptability across different foundry platforms. With a distinct advantage of low power consumption, SuperFlash® emerges as a preferred choice for resource-constrained environments, such as IoT devices and smart cards. Its consistent performance in high-temperature conditions and immunity to stress-induced leakage current further underscore its robustness.\n\nThe adaptability of SuperFlash® technology is enhanced by tailored licensure options, which accommodate a wide array of business needs—from semiconductor manufacturers to fabless design firms. This licensing flexibility ensures that businesses of all sizes can effectively integrate SST's Flash solutions, supporting a diverse spectrum of applications spanning automotive to consumer electronics.
The NuRAM Low Power Memory represents a state-of-the-art memory solution utilizing advanced MRAM technology. Engineered to provide rapid access times and extremely low leakage power, NuRAM is significantly more efficient in terms of cell area compared to traditional SRAM, being up to 2.5 times smaller. This makes it an ideal replacement for on-chip SRAM or embedded Flash, particularly in power-sensitive environments like AI or edge applications. The emphasis on optimizing power consumption makes NuRAM an attractive choice for enhancing the performance of xPU or ASIC designs. As modern applications demand higher efficiency, NuRAM stands out by offering crucial improvements in power management without sacrificing speed or stability. The technology offers a compelling choice for those seeking to upgrade their current systems with memory solutions that extend battery life and deliver impressive performance. NuRAM is particularly beneficial in environments where minimizing power usage is critical while maintaining high-speed operations. This makes it a preferred choice for applications ranging from wearables to high-performance computing at the edge.
The SmartMem Subsystem is designed to enhance memory functionality through a synthesisable and configurable architecture. This memory subsystem significantly boosts power efficiencies and improves both performance and endurance. Not limited to just Numem's own products, it can easily interface with other high-performance MRAMs, RRAM, and Flash technologies, offering versatility across different hardware needs. Built with Numem's thorough memory expertise and innovative patents, the SmartMem Subsystem delivers MRAM performance that rivals SRAM, characterized by much lower standby power. Its intelligent power management system controls MRAM’s non-volatile nature for ultra-efficient operation, making it robust against endurance challenges while seamlessly integrating into varied systems, whether in edge devices or expansive data centers. The subsystem supports software-defined scalability, which negates the necessity for new hardware designs. This makes it an excellent choice for future-proofing memory solutions in AI workloads, ensuring agility and adaptability across rapid advancements in AI applications.
Designed to scale effectively with the growing needs for high-volume data storage, CrossBar's ReRAM IP Cores for High-Density Data Storage offer clients the ability to manage extensive datasets with ease. The cores excel in providing high-speed data access and retrieval capabilities, making them an ideal choice for data centers, AI infrastructure, and complex analytics platforms. These cores support dense data storage configurations within devices, far surpassing the performance specifications of traditional memory options. CrossBar's ReRAM cores offer significant energy savings in storage operations, enabling data centers to drastically reduce power consumption while increasing throughput and efficiency. This green approach to data storage not only enhances computational performance but also aligns with global sustainability efforts to lower energy expenditure. With high-density capabilities, the ReRAM cores play a critical role in optimizing large-scale data handling and facilitate emerging trends like real-time analytics and advanced machine learning algorithms. Integrated into existing infrastructures, these ReRAM cores transcend traditional memory solutions. The technology's flexibility allows for customization, accommodating varied client needs and extending beyond standard operational limitations. Whether deployed in cloud services, enterprise data warehousing, or sophisticated AI training models, CrossBar's ReRAM cores ensure robust performance, reliability, and scalability in handling complex storage challenges.
Static Random-Access Memory, commonly known as SRAM, is a type of computer memory that uses latching circuitry to store each bit. Its primary feature is its ability to retain data bits in memory as long as power is being supplied. Unlike Dynamic Random-Access Memory (DRAM), which needs periodic refreshing, SRAM does not require refreshing, making it faster and more reliable for certain applications. SRAM is designed to perform read and write operations at a faster rate, often used in applications where speed is critical. It is typically employed in cache memory and other high-speed storage solutions. The architecture of SRAM includes a series of transistors arranged in a way that data is maintained in a stable state, allowing swift access and modification. This type of memory is commonly found in applications where performance and reliability are more important than capacity. SRAM's swift access time and its ability to be used at high speeds make it ideal for use in processors, networking applications, and in various embedded systems requiring rapid data access and processing capabilities.
MiniMiser articulates a revolutionary multi-port register file architecture designed with dual focuses on both low power and high performance. This product delivers over 50% reduction in power consumption, allowing developers to finely tune the power envelope through substituted standard register files with MiniMiser. Such power-saving measures help extend the design's practicality in spaces traditionally constrained by power budgets. With its stress on wide operating voltages and flexibility, MiniMiser effectively replaces standard bit cell implementations without the need for excessive clock domain adjustments, level shifters, or static timing analyses. It operates seamlessly in high-density environments where logic blocks interface and interim calculation storage is necessary, making it integral for AI-enhanced wearables. The product's architecture adapts to multiple performance modes assigning them to varying voltage levels, which keeps instantaneous power demands and total power use in check more effectively. Through these enhancements, MiniMiser innovatively cap size and energy requisites while improving the system's competitive sustainability via elongated recharge cycles and reduced thermal management overhead.
Spectral MemoryIP offers a comprehensive range of silicon-proven, high-density, low-power Static Random Access Memories. This robust library includes six standard compiler architectures such as Single Port & Dual Port SRAMs, ROM, and several variations of Register Files. Leveraging either foundry or bespoke bit cell designs crafted by Spectral, these memories combine high-density advantages with low power consumption and performance-oriented circuitry. This dual benefit ensures high-speed operations with minimal energy drain. A notable feature of Spectral MemoryIP is its adaptability, facilitated through the proprietary Memory Development Platform. Available in source code format, designers are empowered to tweak the designs, adopt them for new technologies, or enhance existing functionalities. These memories see widespread usage in standard CMOS process technologies and offer a rich array of features like varied power rails, multiple aspect ratios, and a multi-bank architecture. Spectral's innovative PVT monitoring technology, known as SpectralTrak, is integrated into each memory solution to ensure resilient operation under various environmental conditions. With a user-friendly memory compiler set, Spectral MemoryIP is optimized for diverse embedded storage demands delivering essential capabilities for chip manufacturers and designers.
OPENEDGES offers a DDR Memory Controller which serves as a critical component in managing and optimizing memory operations in contemporary computing systems. This controller interfaces directly with DDR memory, orchestrating read and write operations while ensuring peak data throughput and minimal latency. The architecture of this memory controller is designed to manage various memory channels and is highly configurable, allowing for adaptations specific to customer requirements. By leveraging intelligent algorithms, it efficiently schedules task operations, thereby improving overall performance and reducing power consumption. The controller's versatility makes it ideal for systems that demand high data rates and reliable memory management. In addition to performance benefits, the OPENEDGES DDR Memory Controller also incorporates features to ensure system integrity and data protection. Error correction and detection protocols are embedded to safeguard against data corruption, which is critical for maintaining system reliability in mission-critical applications. Its capability to adapt to various DDR protocols also ensures future-proofing the system against evolving memory standards.
The I-fuse technology from Attopsemi is a revolutionary OTP memory design characterized by its non-explosive action, circumventing the limitations of traditional anti-fuse technology. I-fuse is crafted without requiring specialized masks, utilizing standard logic design processes, allowing for broad compatibility across various tech platforms. Operating across a substantial spectrum from 0.7 µm to 22 nm, it promises exceptional reliability and efficiency, offering higher testability and competitive advantages in size and power use. I-fuse stands out due to its scalability, adaptability for varied applications, and compliance with the AEC-Q100 Grade 0 specification, which makes it robust enough for applications where reliability can’t be compromised. This OTP technology provides enhanced flexibility and precision, especially in automotive and industrial settings. It leverages Attopsemi's extensive patent portfolio and production experience, incorporating the company's 90+ patents into its design principles. With the shipment of over 10,000 wafers per month, I-fuse has demonstrated its practical use and benefits across hundreds of enterprises globally, performing with no reported failures and ensuring a lasting footprint in the market.
The DDR PHY by OPENEDGES is engineered to offer robust and efficient integration within advanced memory systems. This PHY facilitates seamless data transfer and communication between the processor and memory modules, thereby enhancing the overall system bandwidth and efficiency. It supports various DDR standards, which makes it adaptable to a wide range of applications and ensures optimal performance across different system architectures. Designed for next-generation computing systems, the DDR PHY emphasizes reduced power consumption without sacrificing speed or reliability. By implementing sophisticated signal processing capabilities, the design ensures minimal electromagnetic interference and maximized data integrity. This makes it particularly valuable for high-performance computing environments where speed and stability are critical. Moreover, OPENEDGES has ensured that their DDR PHY is scalable and flexible, making it suitable for integration with multiple platforms and technologies. As a result, it's an excellent choice for engineers seeking a versatile memory interface solution that can be tailored to specific project requirements or broader market needs.
The PowerMiser is a pinnacle in low-power SRAM solutions, designed to cater to devices requiring extended battery life and minimal power consumption both when operating and in standby. Developed across several process technologies such as 28nm FDSOI and 22nm ULL bulk CMOS, PowerMiser demonstrates significant power savings, achieving up to 50% reduction in dynamic power while maintaining functionality over wide voltage ranges. With an ability to operate effectively at voltages as low as 0.7V and as high as 1.2V, PowerMiser facilitates flexible design adjustments for varying application needs without performance compromise. This SRAM compiler supports capacities as high as 576Kbit and word lengths up to 144 bits, featuring multiple multiplexing factors to provide designers with varied sizing options. Its innovative "Bit Line Voltage Control" further optimizes power usage, especially in retentive sleep modes offering quick awaken capabilities or deep sleep for maximum leakage savings. PowerMiser supports streamlined dynamic power efficiency suitable for critical applications like edge AI, where minimizing SRAM power usage is essential to product feasibility and competitiveness. Its architecture is geared towards future-focused designs, leveraging low power methodologies to meet contemporary low voltage operation demands in an increasingly battery-conscious world.
The SiC Schottky Diodes are engineered for efficiency in low-loss systems. These silicon carbide devices provide high speed switching and minimal reverse recovery time, significantly reducing conduction losses. As a result, they are an excellent choice for applications such as power factor correction and power inverter circuits. Their unique structure also ensures high voltage operation capability, making them well-suited for both industrial and renewable energy sectors. The diodes’ robustness and efficiency contribute to the development of compact and efficient power management solutions.
Our Embedded ReRAM technology empowers seamless integration into existing system-on-chip (SoC) designs, delivering a compact, efficient memory solution. Designed to cater to the needs of modern electronics, it provides significant advancements in speed and power efficiency over traditional non-volatile memory (NVM) options. With the ability to operate reliably under diverse environmental conditions, this embedded solution is ideal for a wide range of applications including IoT devices, automotive systems, and smarter consumer electronics. One of the standout features of Embedded ReRAM is its eco-friendliness and scalability. Despite being embedded, it ensures a minimal footprint while maintaining high performance, making it a favorable choice for future-proof designs. This technology is engineered to enhance data retention and withstand the rigors of extreme operational environments, reinforcing its suitability for automotive and aerospace applications. The innovation behind Embedded ReRAM focuses on delivering a combination of low-power operation and high-speed performance, overcoming the limitations associated with traditional flash memory. This makes it an exceptionally versatile component in designing edge computing solutions and energy-efficient AI hardware, driving forward the evolution of next-gen intelligent devices.
The Platform-Level Interrupt Controller (PLIC) by Roa Logic is a comprehensive solution for managing interrupt signals in sophisticated and large-scale computing environments. Compatible with RISC-V platforms, it is fully parameterised and offers an efficient means to handle and prioritize multiple interrupt sources. The PLIC's design emphasizes scalability and flexibility, allowing developers to adapt the module for a wide range of system requirements. The PLIC supports a configurable number of interrupt sources, each with customizable priority levels. This enables a tailored approach to the handling of critical interrupts, ensuring that high-priority tasks receive immediate attention. It serves as an essential building block for systems that demand precise and reliable interrupt management, making it indispensable in complex processor environments. With its easy integration into existing RISC-V platforms, the PLIC provides a seamless upgrade to traditional interrupt controllers. Its high level of adaptability ensures that it can be calibrated to complement specific system architectures, enhancing performance in varied operational scenarios.
Ternary Content-Addressable Memory (TCAM) is a specialized type of high-speed memory designed for rapid data look-up tasks. Different from traditional memory that retrieves data based on a provided address, TCAM stores data in a way that allows for searching with multiple potential matches, answering queries with a result of true, false, or don't care (ternary). TCAM is essential in applications that require swift data retrieval among a large dataset, such as in networking devices where it is often used for routing and packet classification. Its ability to simultaneously compare input search data against all stored contents in parallel enhances performance dramatically, making it indispensable for routers in handling vast, intricate routing tables. The versatility of TCAM makes it crucial in environments requiring maximum reliability and speed. Although it tends to be more power-intensive than other memory types due to its complex architecture, ongoing advancements continue to improve its efficiency, ensuring its relevance in high-performance networking and telecommunications equipment.
Everspin's xSPI for Industrial IoT and Embedded Systems is a part of their innovative non-volatile memory solutions, utilizing the expanded Serial Peripheral Interface standard. Tailored for industrial applications, these MRAM products offer high speed and reliability, ensuring persistent data availability and integrity. The xSPI technology is designed with a focus on improved performance across various IoT and embedded systems, featuring a high-speed bus interface that supports intensive data transactions. Its compatibility with SPI makes it a versatile option for integrating into various systems, reducing the need for complex redesigns. With its robust architecture, the xSPI is ideal for use in harsh environments typical of industrial settings, where durable and reliable memory solutions are crucial. This product family offers flexibility, allowing for varying capacities and interfaces, making it an optimal solution for industrial automation, automotive, and other applications demanding high endurance memory solutions.
The Quazar Quad Partition Rate Memories are designed to support the next generation of high-speed, low-latency, and high-bandwidth random access memory applications. The Quazar architecture allows a single memory IC to replace multiple QDRs, providing high capacity and simplified design integration within FPGA systems. This memory solution offers flexibility through its operational modes: DEEP mode, which configures memory access as four independent SRAMs, and WIDE mode, which configures as eight independent SRAMs, enabling dynamic memory partitioning. Each Quazar IC features a high capacity of either 576Mb or 1Gb, with operational modes that improve system bandwidth and reduce board complexity by utilizing fewer serial SERDES connections. This leads to lower costs and simpler board designs. The use of dual-port memory supports advanced applications where high throughput and data integrity are paramount, such as network switches and data planes. The Quazar memory systems greatly enhance system-level performance by offering increased memory bandwidth and simplified FPGA interfacing through the MoSys-supplied RTL Memory Controller. This controller ensures efficient management of high-speed SERDES interfaces while maintaining system integrity, positioning the Quazar memory as an ideal replacement for traditional QDR memory configurations.
Magnetoresistive Random-Access Memory (MRAM) is an innovative type of memory technology that utilizes magnetic states to store information, in contrast to traditional electronic states used by other types of memory. This makes MRAM extremely resistant to radiation, which can be beneficial in industries dealing with high exposure to such environments. A defining feature of MRAM is its non-volatility; it retains data without the need for a continuous power supply. This feature, combined with high-speed read and write capabilities, positions MRAM as a suitable candidate for applications that require retention of data without power and quick data access. MRAM also boasts a lower power consumption compared to other memory types, such as DRAM and SRAM, contributing to energy-efficient designs. MRAM's resilience and efficiency make it ideal for use in aerospace, automotive, and military applications, where reliability and longevity are critical. It is progressively finding applications in consumer electronics as well, thanks to its scalability and compatibility with existing manufacturing processes.
Spin-transfer Torque MRAM (STT-MRAM) from Everspin is an advanced non-volatile memory technology that offers high speed, endurance, and data retention capabilities. This type of MRAM leverages the spin-transfer torque effect to enable efficient writing of data, thus enhancing the durability and performance of the memory device. STT-MRAM is essential in environments where data consistency and availability are pivotal, such as data centers and enterprise infrastructure. It replaces traditional volatile memory types like DRAM in some applications, providing persistent data storage even without continuous power supply. Moreover, STT-MRAM eliminates the risks of data loss due to power interruptions, making it a favored choice in mission-critical applications. The technology is designed to integrate seamlessly with existing computing architectures, enhancing system-level performance and providing a robust solution to modern data storage challenges. With its high switching speed and low power consumption, STT-MRAM is positioned as a future-ready technology for a diverse array of industries.
Everspin’s SPI MRAM devices utilize the Serial Peripheral Interface to provide efficient, non-volatile memory solutions with a high degree of flexibility. These MRAM products are optimized for applications that require a compact form factor and energy-efficient operations, sustaining memory integrity in the face of power disruptions. SPI MRAM is characterized by its straightforward integration capabilities, which minimizes design complexity and facilitates faster time-to-market for various products. Its fast read/write speed, coupled with non-volatility, is particularly advantageous for applications in industrial control and consumer electronics, where quick data recovery and preservation are critical. This MRAM variant is configured to suit a range of operational environments, from low-energy IoT devices to more demanding industrial components. With its high endurance and reliability, SPI MRAM stands out as a cost-effective memory solution that boosts the efficiency and reliability of embedded systems.
Everspin’s Parallel Interface MRAM offers versatile memory solutions with a parallel bus interface, widely utilized in high-speed data processing environments. These MRAM products provide fast read/write capabilities, making them ideal for applications that demand swift data transactions and high reliability. One of the key advantages of Parallel Interface MRAM is its compatibility with standard SRAM, particularly in terms of pin architectures and interfaces, which allows for seamless integration into existing systems. The technology is engineered to perform robustly under different conditions, maintaining data integrity across multiple cycles and providing a high endurance solution that reduces the total cost of ownership. Its deployment in various industries such as defense and telecommunications underscores its versatility and effectiveness in real-world applications. With the parallel interface, the MRAM ensures high data throughput, contributing to improved operational efficiency and performance in critical applications worldwide.
Specially designed for radiation-hard markets, Everspin's MRAM solutions provide reliable memory options for space and military applications. These MRAM products ensure data integrity even under the challenging radiation conditions found in space. The technology prides itself on its resilience, offering non-volatile memory that isn’t susceptible to upsets commonly caused by radiation. This makes it an ideal option for satellite, aerospace, and other space-bound technologies requiring high reliability over extended periods. Radiation-hard MRAM by Everspin delivers performance akin to other volatile memory types but eliminates the need for constant power supply. It’s tailored for applications where data must endure harsh external factors while maintaining rapid access and operational efficiency.
SLL's Modular PHY Type 01 Suite is a PVT aware, foundry and process agnostic, PHY for use with most single-ended LVCMOS protocols up to 400 MHz DDR. The PHY has a highly modular architecture that supports x1, x4, x8, and x16 data paths. Its has process-voltage-temperature (PVT) controls that are suitable for use in hard realtime systems (zero timing interference on PVT adjustments). The PHY includes a full standard cell library abstraction. The PHY also offers >1000 configurable options at compile time, enabling coarse grain capabilities such as pin-level deskew to be enabled/disabled, along with precise fine-grain control of mapping of RTL to gates through various data paths. It supports a range of protocols such as SPI, QSPI, xSPI, eMMC, .. and allows run-time configuration via an APB3 control port. It is designed to support easy place-and-route in a broad range of customer designs.
This multi-channel DMA controller is crafted for handling multiple data streams efficiently, supporting from 1 to 16 channels and slated for future enhancements up to 256 channels. It includes dedicated DMA Read and Write controllers to maximize data throughput and provides options for FIFO buffering, ensuring seamless integration with various memory and peripheral systems. With the flexibility to manage diverse data setups effectively, the DB9000-AXI excels in optimizing system performance within complex digital infrastructures.
KNiulink Semiconductor's DDR IP combines advanced structure and technology to deliver high-performance, low-power solutions for DDR3/4/5 and LPDDR2/3/4/4x/5 applications. These solutions are crafted to meet the requirements of modern computing environments, providing low latency and high bandwidth.
Discrete ReRAM chips developed by Weebit Nano provide a standalone memory solution that excels in environments requiring robust performance combined with low energy demand. This technology is engineered to reduce production costs while enhancing device efficiency, catering especially to industries where standalone memory solutions are pivotal. These chips boast impressive scalability, ensuring they remain relevant in a landscape where rapid technological advancements demand constant evolution of components. The simplicity and eco-friendly aspects of Discrete ReRAM chips make them a key asset in next-generation technology stacks aimed at driving down power consumption while retaining maximum processing efficiency. By leveraging its significant advantages such as high endurance and speed, Weebit's Discrete ReRAM offers a viable path towards achieving streamlined memory infrastructure within diverse sectors including edge computing, automotive, and industrial applications. This standalone approach allows greater freedom in design for tailored memory specifications without the constraints imposed by traditional non-volatile memories.
The QDR IV XP PHY and Memory Controller from Atria Logic is a high-performance component designed to operate with next-generation memories at speeds up to 800MHz. Suitable for Stratix V FPGA platforms, it supports comprehensive training sequences and calibration for optimal communication between components. Its integration of de-skew training and rate conversion features ensures efficient data handling. Architectured for high-performance networking applications, this memory controller delivers seamless performance driven by a stable and precise control over memory operations, meeting the rigorous demands of modern data processing environments.
Atria Logic’s DDR-I/II/III Controller assists in managing efficient data flow across diverse memory configurations to satisfy high-performance telecommunications and computing demands. Supporting a range of DDR SDRAMs as per JEDEC specifications, its flexible interface allows smooth integration within FPGA or System-on-Chip environments. By automating complex cycle operations and offering preset configurations, this controller ensures adaptability while maintaining efficiency. Its advanced power management features, alongside low-latency design, make it suitable for modern data-processing applications that require seamless and uninterrupted memory operations.
Building on the PowerMiser framework, PowerMiser Plus sets a new benchmark in ultra-low voltage SRAM solutions. This product line supports voltages as low as 0.45V without imperiling performance, allowing synergistic logic and memory operations within the same voltage tier. By maintaining minimal voltage differentials between the core array and peripheral supplies, PowerMiser Plus eliminates the need for level shifters, further enhancing power efficiency. In response to increasing market demands for longer device battery lives, especially in edge AI where SRAM consumption is substantial, PowerMiser Plus ensures optimal power savings by transitioning applications to operate at lower voltages while maintaining sufficient computational integrity. It employs an architecture that facilitates simultaneous adjustments in logic and SRAM voltages, improving overall device energy efficiency. PowerMiser Plus effectively addresses the challenges faced in power-conscious application spaces, where traditional solutions fail to meet stringent energy objectives. Its cutting-edge low-voltage expertise aids in catering to applications needing state-of-the-art power reduction strategies to achieve ambitious power budgets set within the industry.
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