In a major breakthrough for power electronics, Novel Crystal Technology (NCT) of Saitama, Japan, has developed a gallium oxide vertical MOS transistor ((\beta)-Ga(_2)O(_3) MOSFET) that sets a new record for power figure of merit (PFOM). With a PFOM of 1.23GW/cm(^2), this development marks a 3.2-fold improvement over the previous record, setting the stage for advancements in medium- to high-voltage applications.

Gallium oxide has been an up-and-coming contender in the realm of semiconductor materials, poised to replace silicon in power electronics. Its superior characteristics include a higher breakdown electric field strength, allowing for greater efficiency and cost-effectiveness, which are particularly crucial for applications ranging from industrial equipment to renewable energy systems.

The achievement by NCT is attributed to their innovative use of a high-resistance guard ring structure infused with magnesium (Mg) ion implantation. This technique effectively reduces the concentration of the electric field at the edge of the gate electrode, a significant hurdle that has limited the full exploitation of gallium oxide’s potential.

As detailed in a Semiconductor Today article, these advancements are part of NCT’s efforts funded by Japan's National Security Technology Research Promotion Fund, aiming to commercialize (\beta)-Ga(_2)O(_3) MOSFETs for broader industrial use.

Looking forward, the improvements in gallium oxide MOSFETs hold the promise of further size reductions and efficiency gains in power electronic devices. These enhancements could significantly impact fields such as electric vehicle drivetrains, industrial inverters, and the integration of renewable energy sources into the grid. NCT’s next steps involve exploring hetero p-type semiconductor materials to further mitigate electric field concentration, potentially unlocking even greater performance capabilities that could rival or surpass current silicon carbide solutions.

This technological leap not only highlights the potential of gallium oxide as a material of choice for future semiconductor devices but also underscores NCT’s leading role in pioneering advancements in power electronics.