In the ever-evolving world of semiconductors, understanding the nuances of extreme ultraviolet (EUV) lithography is pivotal for staying on the cutting edge of chip manufacturing. A recent paper by Hanyang University and Paul Scherrer Institute delves into the crucial topic of particle impact on the pellicle surface, emphasizing variances according to the type of EUV mask pattern.

This study highlights how variations in mask diffraction, induced by a simple tin particle presence on the pellicle surface, can cause significant changes in critical dimension—up to three times greater in line-and-space patterns compared to contact hole patterns. Insights from this research suggest a need to redefine critical particle size per mask pattern type, ultimately enhancing lithographic quality and process efficiency.

As semiconductor professionals, understanding these microscopic influences allows for better design and application of EUV lithography, ensuring high precision and performance in chip production.