Introduction
Infineon Technologies AG has unveiled a groundbreaking advancement in the field of power transistors with the introduction of its new radiation-hardened gallium nitride (GaN) transistors. These advanced components are crafted to perform amidst the harsh conditions of space, representing a significant stride in the semiconductor industry . Infineon Launches New Rad-hard GaN Transistors

The Revolutionary GaN Transistors
Infineon's GaN transistors bring a host of innovations to the table. Built on their well-regarded CoolGan technology, these devices boast enhanced efficiency, exceptional thermal management, and superior power density – crucial characteristics for space applications. The newly launched transistors, designed in Infineon's own foundries, are tailored to meet the rigorous demands of mission-critical aerospace and defense projects.

Achieving JANS Certification
In an industry first, Infineon has successfully manufactured GaN power devices that have received the Defense Logistics Agency's JANS certification. This certification is a testament to the rigorous screening and high-quality standards that these devices meet. It underscores Infineon's commitment to ensuring performance reliability for space-bound missions, vital for operations ranging from on-orbit satellite function to manned missions and deep space explorations.

Technical Specifications
The initial batch of the new GaN transistors includes three product variants engineered to meet specific space application needs. These are 100V, 52A devices, boasting an industry-leading drain–source on resistance and gate charge. They are packaged in robust, hermetically sealed ceramic enclosures, ensuring resilience against single-event effects up to significant energy levels. Among these, one variant achieves the stringent JANS certification, providing an assurance of quality for critical space operations.

The Implications for the Aerospace Market
Chris Opoczynski, senior VP & general manager HiRel at Infineon, stresses the importance of these new power transistors in moving the aerospace industry forward. By leveraging the unique material properties of wide-bandgap semiconductors, these transistors promise to fuel advancements in defense and space technologies, offering smaller, lighter, and more reliable design options.

Future Prospects
Infineon's move not only reflects their capacity to innovate but also sets a robust example for the semiconductor industry, pointing to a future where GaN-based solutions become integral to space technology. With engineering samples already available, and full production slated for mid-2025, Infineon is positioning itself as a pivotal player in the ongoing development of high-reliability power solutions for space applications. Furthermore, plans to expand the JANS-certified product line to accommodate varying voltage and current requirements are already underway.

Conclusion
Infineon's entry into the GaN transistor market, complete with JANS-certification, is a significant leap forward for the aerospace industry. It paves the way for future innovations, ensuring that space missions are empowered with devices capable of withstanding the most extreme conditions. As space exploration continues to expand, the introduction of these robust systems could very well become a critical component of both defense and civilian space endeavors, ultimately shaping the future of space technology.