Chip Talk > Nexperia Unveils Next-Gen ASFETs for High-Efficiency Industrial Applications
Published September 30, 2025
The evolution of semiconductor technology never ceases to astound us, and the recent strides by Nexperia in the realm of application-specific MOSFETs (ASFETs) epitomizes this progressive ingenuity. Their latest introduction features two groundbreaking switches— the PSMN1R9-80SSJ and PSMN2R3-100SSJ— specifically engineered to cater to high-power 48 V applications that necessitate the paralleled use of MOSFETs. This advancement comes as a beacon for designers grappling with the persistent challenge of dynamic current sharing.
In industrial applications where high current capability is pivotal, it's commonplace for several MOSFETs to be connected in parallel. However, achieving equal load current distribution among these devices during their operation is a complex task. Traditionally, ensuring this balance involved over-specifying MOSFETs, which was both costly and time-consuming. This approach didn't always guarantee performance at higher load currents, making it less than optimal.
Nexperia, a stalwart in the semiconductor realm, identified the existing gap and addressed it with their new ASFETs. These devices remarkably minimize the need for over-specification and the associated costs. The PSMN1R9-80SSJ and PSMN2R3-100SSJ switches shine in their ability to offer enhanced current sharing dynamics, specifically a 50% reduction in the current delta between parallel devices, up to 50 A per device, during switching.
A significant contributor to this enhancement is the reduction in the VGS(th) window to 0.6 V, a substantial alleviation compared to conventional setups. The inclusion of low RDS(on) values—1.9 mΩ and 2.3 mΩ respectively—bolsters these ASFETs' efficiency, making them ideal for power switching applications.
The implications of these advancements are vast. For industries reliant on electric vehicle motor drives and high-power industrial motors, such as those found in forklifts and e-scooters, the benefits are clear. The ability to utilize closely matched MOSFETs that inherently ensure better load current distribution can lead to increased reliability and longevity of electronic systems, reducing the thermal stress typically associated with mismatched switches.
Nexperia's ASFETs are also notable for their resilience in demanding environments, encapsulated in an 8 mm x 8 mm copper-clip LFPAK88 package, able to withstand temperatures from -55 °C to +175 °C. This ruggedness offers peace of mind to designers looking to implement these MOSFETs in diverse conditions.
The semiconductor industry is perpetually on the frontier of innovation, and with Nexperia’s ASFETs, we're witnessing a vital step towards more efficient and affordable power management solutions. These developments not only highlight their commitment to excellence but also reflect the competitive and ever-evolving landscape of semiconductor IP. As companies like Nexperia continue pushing boundaries, the future of industrial applications and power electronics looks promisingly efficient and sustainable.
For further insights or inquiries into these pioneering products, consider visiting the Nexperia ASFET product page and explore how these advancements can optimize your applications.
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