Introduction to the New MOSFETs from Nexperia

Nexperia's latest announcement brings a breakthrough in the design of 100 V MOSFETs, a product critical for advancing automotive applications. These innovative components, AEC-Q101 qualified and housed in compact CCPAK1212 copper-clip packaging, promise to deliver ultra-low conduction losses with an exceptional on-resistance (RDS(on)) as low as 0.99 mΩ. Such advancements position them as a pivotal element in the evolution of automotive engineering, particularly for systems operating on 48 V power.

These MOSFETs are crafted to meet the demands of thermal efficiency in high-power automotive applications including on-board chargers, traction inverters, and battery management systems. Not just limited to passenger vehicles, these MOSFETs are equally beneficial in 2- and 3-wheel electric mobility solutions, DC-DC converters, and high-current industrial modules. In essence, wherever efficiency and thermal reliability are paramount, these devices are set to make a significant impact.

Why 48 V Systems are the Future

The automotive industry is undergoing a transformation from 12 V to 48 V systems, driven by the need to improve efficiency, reduce component weight, and extend the range of electrified vehicles. Nexperia’s MOSFETs are designed to overcome one of the most pressing challenges in this transition—minimizing conduction losses.

In high-power settings, designers typically resort to connecting several MOSFETs in parallel to meet necessary performance standards. Nexperia's new products disrupt this tradition by offering ultra-low RDS(on) combined with high power density, significantly reducing the need for such parallel connections. Moreover, they promise up to 40% savings in PCB space compared to conventional TOLL- or TOLT-packaged MOSFETs. This is an important consideration for designers who are now pressured to produce more compact and efficient electronic systems.

The Technical Edge

One standout feature of these MOSFETs is their robust Safe Operating Area (SOA) ratings, reaching up to 400 A at 100 V. This is made possible by the next-generation 100 V AEC-Q101 trench silicon platform, coupled with Nexperia’s proprietary copper-clip CCPAK1212 package which offers outstanding thermal performance (Rth(j-b) = 0.1 K/W).

This architecture not only enhances thermal management but also supports higher current capabilities and superior power densities—an ideal fit for high-demand applications. The choices in cooling options, either inverted top-side cooled or bottom-side cooled versions, give engineers the flexibility to pick configurations that best fit their systems, ensuring both space optimization and thermal efficiency.

Broader Implications and Future Directions

Nexperia’s leap in MOSFET technology highlights the ongoing momentum toward more electrified and efficient vehicles. As automotive Original Equipment Manufacturers (OEMs) continue to champion electric vehicle platforms, the demand for more advanced and reliable semiconductor components rises. This innovation is much more than just incremental—it's a decisive shift in how electronic systems in automotive are conceived and constructed.

The implications of these advancements are broad, not only refining current platforms but also paving the way for new designs in e-mobility and beyond. As highlighted in Nexperia's press release, this new product line is poised to support the evolving needs of the industry well into the future.

Conclusion

In the rapidly advancing world of automotive technology, Nexperia's new 100 V MOSFETs address several key challenges, providing engineers with powerful tools to create more efficient, compact, and reliable systems. As technology continues to accelerate, products like these will be the backbone supporting the transitions to more sustainable and efficient automotive landscapes. Their introduction is not just a step forward for Nexperia, but a giant leap for the entire semiconductor and automotive industries.