The pursuit of better-performing power devices has taken a significant step forward with groundbreaking research from King Abdullah University of Science and Technology (KAUST). This research focuses on the application of atomic layer etching (ALE) in the development of aluminium-rich III-nitride (III-N) Schottky barrier diodes (SBDs).

Atomic layer etching is a precise technique that enables superior control over material removal at the atomic level. For aluminium-rich III-nitride semiconductors, this means a reduction in interface traps and native oxide, which traditionally contribute to leakage current and less uniform Schottky barriers. KAUST's research demonstrated that SBDs processed with ALE exhibited impressive breakdown voltages of 1205V, contrasting sharply with the 308V of those without ALE treatment. You can find more technical details and insights in the original article.

The sophistication of ALE lies in its ability to operate at low ion energy, thus ensuring minimal surface damage—a vital aspect for power device reliability and performance. Particularly, the technique could prove transformative for applications demanding higher bandgaps and breakdown voltages, such as those found in cutting-edge power-handling devices.