TSMC, a pioneer in semiconductor manufacturing, recently revealed that their latest N2 process exhibits a defect density lower than its predecessor, N3, when assessed at the same stage of development. This was reported during their North American Technology Symposium, showcasing TSMC's consistent stride in innovation.

Interestingly, the N2 node marks TSMC’s first foray into gate-all-around (GAA) nanosheet transistors, departing from the traditional FinFET architecture. Despite the architectural shift, the N2 displays a promising reduction in defect density earlier in its production cycle compared to its predecessors - a significant confidence booster as the company gears up for mass production in late Q4 2025.

A slide published by ComputerBase maps the defect reduction for multiple nodes, revealing that the N2's RD efforts are bearing fruit. Notably, TSMC’s approach of leveraging diverse product development to aid swift defect learning and management seems to be paying off handsomely.

This development not only underlines TSMC's expertise in navigating new technological landscapes but also reassures its clients of the robustness and reliability of the upcoming N2 technology, setting a promising outlook for GAA-based processes as they edge towards high-volume manufacturing.