Chip Talk > Unlocking New Dimensions in Space: EPC’s Revolution in GaN FET Technology
Published June 25, 2025
The semiconductor industry has seen a myriad of advancements in recent years, but the recent announcement from EPC Space stands out notably. The unveiling of a 300V radiation-hardened Gallium Nitride (GaN) Field-Effect Transistor (FET) marks yet another milestone in space technology, particularly for satellite and electric propulsion systems.
GaN is a semiconductor known for its high efficiency and capability to function under high temperatures and voltages. It has inherently low on-resistance and high electron mobility, making it a preferred choice in power applications. Recent years have witnessed GaN taking a lead role in applications needing robust voltage and current handling capacity, such as satellite power systems.
EPC’s new 300V GaN FET, the EPC7030MSH, brings a variety of features to the table:
Radiation Hardened: Designed for the rigors of space, this component can endure a linear energy transfer (LET) of 63 MeV at 300V and 84.6 MeV at 250V.
Efficiency and Performance: It boasts the lowest RDS(on) and gate charge in its class, crucial metrics that translate to superior efficiency and miniaturization of space-bound power systems.
Current Handling: When it comes to raw power handling, it sets records for the highest current rating among its competing technologies.
The EPC7030MSH addresses the critical need for efficient DC-DC converters in satellite systems. As satellites operate within stringent thermal environments and under exposure to cosmic radiation, components like these ensure reliable mission-critical electronic systems. This innovation not only promises enhanced performance but also enables spacecraft designers to achieve lighter and more efficient architectures.
The drive for innovation doesn’t end here. EPC’s release aligns with a growing trend towards GaN’s adoption in broader applications beyond traditional high-power markets. The miniaturization of power components without compromising performance is opening new design possibilities in both terrestrial and extraterrestrial domains.
EPC Space’s introduction of the EPC7030MSH GaN FET heralds a significant advancement in semiconductor technology for space. As we continue to push the boundaries of what’s possible in lower orbit and beyond, technology like this will ensure efficiency and resilience in the most challenging conditions. Read more about EPC’s groundbreaking announcement.
This development reflects a broader industry perspective where achieving more with less — increased efficiency paired with reduced size and weight — is key to the success of next-generation electrification in both public and private space endeavors.
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